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Файл:US Patent 1745175 Lilienfeld proto-FET.PNG

US_Patent_1745175_Lilienfeld_proto-FET.PNG ‎(769 × 523 пкс, размер файла: 37 Кб, MIME-тип: image/png)

Описание
Русский: Из патента США 1745175, выданного Юлиусу Лилиенфельду: первый прототип полевого транзистора.
English: The field-effect transistor was patented by Julius Edgar Lilienfeld in 1926. For almost thirty years, researchers tried to implement it in real life... and each time they failed. In the 1940s one group, led by John Bardeen, tried to do it and accidentally invented the point-contact transistor. It worked... sort of. The true FET became a reality a decade later.
Дата Filed Oct 8 1926
Источник U.S. Patent 1,745,175
Автор en:Julius Lilienfeld and perhaps his US patent attorneys
May or may not be in the public domain
 In general, the contents of United States patents are in the public domain.

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A portion of the disclosure of this patent document contains material which is subject to (copyright or mask work) protection. The (copyright or mask work) owner has no objection to the facsimile reproduction by any­one of the patent document or the patent disclosure, as it appears in the Patent and Trademark Office patent file or records, but otherwise reserves all (copyright or mask work) rights whatsoever.

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текущий05:59, 31 марта 2012Миниатюра для версии от 05:59, 31 марта 2012769 × 523 (37 Кб)Retired electrician{{Information |Description=Из патента США 1745175, выданного Юлиусу Лилиенфельду: первый прототип полевого транзистора.<br>The first historical patent for field-effect transistor |...

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Источник — https://ru.wikipedia.org/wiki/Файл:US_Patent_1745175_Lilienfeld_proto-FET.PNG